• DocumentCode
    1059036
  • Title

    Transverse diffusion in planar transistors

  • Author

    Bhat, K.N. ; Achuthan, M.K.

  • Author_Institution
    Indian Institute of Technology, Madras, India
  • Volume
    25
  • Issue
    1
  • fYear
    1978
  • fDate
    1/1/1978 12:00:00 AM
  • Firstpage
    57
  • Lastpage
    60
  • Abstract
    The possibility of existence of a transverse diffusion current of minority carriers to the base contact in planar transistors is demonstrated using an electrolytic tank analog. The magnitude of this current is compared with the axial recombination current and the minority carrier current injected into the emitter.
  • Keywords
    Charge carrier processes; Contacts; Doping; Electron emission; Equations; Impurities; Photonic band gap; Silicon; Spontaneous emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19032
  • Filename
    1479426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059036