Title :
A simple analytical model for estimating DC α of lateral p-n-p transistors
Author :
Ram, G.V. ; Tyagi, M.S.
Author_Institution :
Indian Institute of Technology, Kanpur, India
fDate :
1/1/1978 12:00:00 AM
Abstract :
A quasi-one-dimensional model which can estimate dc α of lateral (p-n-p) transistors fairly accurately is proposed. Variation of α with epilayer thickness and electric field in the buried layer is investigated. Results obtained are in good agreement with the two-dimensional analysis.
Keywords :
Analytical models; Electron emission; Equations; Frequency response; Geometry; Integrated circuit modeling; Materials science and technology; Niobium; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19034
