Title :
Minimum geometry etch windows to a polysilicon surface
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
1/1/1978 12:00:00 AM
Abstract :
Windows of less than 0.1 µm in width on a polysilicon surface are demonstrated. These narrow windows have been produced by the edge etch process. The usefulness of this technique for producing narrow openings in a polysilicon layer is discussed.
Keywords :
Electron devices; Etching; Fabrication; Geometry; Numerical analysis; P-n junctions; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19037
