• DocumentCode
    1059113
  • Title

    Quantized dissipation of the quantum Hall effect at high currents

  • Author

    Cage, Marvin E.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • Volume
    42
  • Issue
    2
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    176
  • Lastpage
    178
  • Abstract
    Quantized dissipative voltage states are observed when large currents are passed through a high-quality quantized Hall resistance device. These dissipative states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The author shows that the quantization is more complicated than previously thought. For example, the quantization can be a function of magnetic field. Therefore, the dissipative voltage quantization can, in general, be difficult to verify and determine
  • Keywords
    Landau levels; quantum Hall effect; GaAs-AlxGa1-xAs; Landau levels; dissipative voltage quantization; quantised dissipative voltage; quantized Hall resistance device; quantum Hall effect; Breakdown voltage; Electric breakdown; Electrons; Hall effect; Helium; Magnetic fields; NIST; Probes; Quantization; Temperature;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.278544
  • Filename
    278544