DocumentCode
1059113
Title
Quantized dissipation of the quantum Hall effect at high currents
Author
Cage, Marvin E.
Author_Institution
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Volume
42
Issue
2
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
176
Lastpage
178
Abstract
Quantized dissipative voltage states are observed when large currents are passed through a high-quality quantized Hall resistance device. These dissipative states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The author shows that the quantization is more complicated than previously thought. For example, the quantization can be a function of magnetic field. Therefore, the dissipative voltage quantization can, in general, be difficult to verify and determine
Keywords
Landau levels; quantum Hall effect; GaAs-AlxGa1-xAs; Landau levels; dissipative voltage quantization; quantised dissipative voltage; quantized Hall resistance device; quantum Hall effect; Breakdown voltage; Electric breakdown; Electrons; Hall effect; Helium; Magnetic fields; NIST; Probes; Quantization; Temperature;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.278544
Filename
278544
Link To Document