Title :
High density CID imagers
Author :
Brown, Dale M. ; Ghezzo, Mario ; Sargent, Paul L.
Author_Institution :
General Electric Corporate Research and Development Center, Schenectady, NY
fDate :
2/1/1978 12:00:00 AM
Abstract :
The fabrication and performance of large (16K, 60K, and 78K cells) high density CID self-scanned imager arrays is described. Array fabrication used overlapping electrodes of two levels of polysilicon or a first level of polysilicon and a second level of antimony tin oxide. Yield considerations and the special processing steps required to fabricate these large chips are examined. Quantum efficiency curves of these structures are compared.
Keywords :
Aluminum; Annealing; Circuits; Clocks; Dark current; Electrodes; Fabrication; Logic design; Research and development; Signal design;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19042
