Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Author

Mingchu Tang ; Jiang Wu ; Siming Chen ; Qi Jiang ; Seeds, Alwyn J. ; Huiyun Liu ; Dorogan, Vitaliy G. ; Benamara, Mourad ; Mazur, Yuriy ; Salamo, Gregory

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK

Volume

9

Issue

2

fYear

2015

fDate

4 2015

Firstpage

61

Lastpage

64

Abstract

The authors report 1.3-μm InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm² at room temperature and an operating temperature as high as 85°C is successfully demonstrated. These results show the potential for integrating III-V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; integrated optoelectronics; micro-optics; optical fabrication; optical filters; optimisation; quantum dot lasers; semiconductor growth; semiconductor superlattices; silicon; III-V QD material integration; InAlAs-GaAs; InAs-GaAs; dislocation filter layer optimisation; indium aluminium arsenide-gallium arsenide strained layer superlattices; indium arsenide-gallium arsenide quantum-dot laser monolithically growth; silicon substrates; size 1.3 mum; temperature 293 K to 298 K; threshold current density;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2014.0078

Filename

7062109