Title :
The resistive gate CTD area-image sensor
Author :
Heyns, Hendrik ; van Santen, J.G.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
2/1/1978 12:00:00 AM
Abstract :
The transport of charge in a resistive gate controlled PCCD channel structure is described. With the aid of time analysis it is shown that this structure can be used for column transport in a practical area-image sensor. The operating principles of this type of CTD sensor are discussed, with emphasis on blue sensitivity and antiblooming operation. A 96-element linear test circuit has been built for evaluating the expected sensor performance. Design data and some relevant measured results are presented. Results for charge transport time, modulation transfer function, and spectral responsivity illustrate the feasibility of this new solid-state sensor approach.
Keywords :
Charge carriers; Circuit testing; Electrodes; Helium; Image converters; Image sensors; Image storage; Integrated circuit measurements; Solid state circuits; Transfer functions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19050
