DocumentCode
1059257
Title
Buffered direct injection of photocurrents into charge-coupled devices
Author
Bluzer, N. ; Stehlik, R.
Author_Institution
Westinghouse Advanced Technology Laboratories, Baltimore, MD
Volume
25
Issue
2
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
160
Lastpage
166
Abstract
In this paper we introduce a new and novel method for improving the coupling between photovoltaic IR detectors and CCD signal processors. This new coupling scheme, buffered direct injection (BDI), is a method for improving the direct injection of a signal current into a CCD. The buffered direct injection structure is formed by incorporating a simple amplifier into the conventional direct injection structure. The new structure formed is amenable to LSI technology and offers significant improvements over conventional injection. Improvements in noise, injection efficiency, injection bandwidth and dc offset realized by the BDI approach over conventional coupling structures (e.g., direct injection) are discussed. Experimental evidence is presented to corroborate the analysis.
Keywords
Bandwidth; Charge coupled devices; Electrodes; Infrared detectors; Large scale integration; Photoconductivity; Photodetectors; Photovoltaic systems; Signal processing; Solar power generation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19054
Filename
1479448
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