• DocumentCode
    1059257
  • Title

    Buffered direct injection of photocurrents into charge-coupled devices

  • Author

    Bluzer, N. ; Stehlik, R.

  • Author_Institution
    Westinghouse Advanced Technology Laboratories, Baltimore, MD
  • Volume
    25
  • Issue
    2
  • fYear
    1978
  • fDate
    2/1/1978 12:00:00 AM
  • Firstpage
    160
  • Lastpage
    166
  • Abstract
    In this paper we introduce a new and novel method for improving the coupling between photovoltaic IR detectors and CCD signal processors. This new coupling scheme, buffered direct injection (BDI), is a method for improving the direct injection of a signal current into a CCD. The buffered direct injection structure is formed by incorporating a simple amplifier into the conventional direct injection structure. The new structure formed is amenable to LSI technology and offers significant improvements over conventional injection. Improvements in noise, injection efficiency, injection bandwidth and dc offset realized by the BDI approach over conventional coupling structures (e.g., direct injection) are discussed. Experimental evidence is presented to corroborate the analysis.
  • Keywords
    Bandwidth; Charge coupled devices; Electrodes; Infrared detectors; Large scale integration; Photoconductivity; Photodetectors; Photovoltaic systems; Signal processing; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19054
  • Filename
    1479448