DocumentCode :
1059257
Title :
Buffered direct injection of photocurrents into charge-coupled devices
Author :
Bluzer, N. ; Stehlik, R.
Author_Institution :
Westinghouse Advanced Technology Laboratories, Baltimore, MD
Volume :
25
Issue :
2
fYear :
1978
fDate :
2/1/1978 12:00:00 AM
Firstpage :
160
Lastpage :
166
Abstract :
In this paper we introduce a new and novel method for improving the coupling between photovoltaic IR detectors and CCD signal processors. This new coupling scheme, buffered direct injection (BDI), is a method for improving the direct injection of a signal current into a CCD. The buffered direct injection structure is formed by incorporating a simple amplifier into the conventional direct injection structure. The new structure formed is amenable to LSI technology and offers significant improvements over conventional injection. Improvements in noise, injection efficiency, injection bandwidth and dc offset realized by the BDI approach over conventional coupling structures (e.g., direct injection) are discussed. Experimental evidence is presented to corroborate the analysis.
Keywords :
Bandwidth; Charge coupled devices; Electrodes; Infrared detectors; Large scale integration; Photoconductivity; Photodetectors; Photovoltaic systems; Signal processing; Solar power generation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19054
Filename :
1479448
Link To Document :
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