Title :
Dielectric properties of nanostructured polypropylene-polyhedral oligomeric silsesquioxane compounds
Author :
Takala, M. ; Karttunen, M. ; Salovaara, P. ; Kortet, S. ; Kannus, K. ; Kalliohaka, T.
Author_Institution :
Tampere Univ. of Technol., Tampere
fDate :
2/1/2008 12:00:00 AM
Abstract :
This paper presents the results of the dielectric measurements conducted on polymer nanocompounds consisting of polypropylene (PP) and polyhedral oligomeric silsesquioxane (POSS). The material compounds were analyzed with a scanning electron microscope (SEM) and Raman-atomic force microscope (Raman-AFM). Ac and lightning impulse (LI) breakdown strength of the material compounds were measured. Relative permittivity, loss factor and volume resistivity measurements were also conducted on the material samples. Two types of POSS, octamethyl and isooctyl, were used in different quantities. The thickness of the samples was approximately 600 mum. Statistical analysis was applied to the results to determine the effects of the additive type and amount on the breakdown strength of polypropylene. The paper discusses the possibilities and restrictions in order to achieve advantages in high voltage applications using polyhedral oligomeric silsesquioxanes.
Keywords :
Raman spectra; atomic force microscopy; dielectric losses; electric breakdown; nanostructured materials; permittivity; polymers; scanning electron microscopy; statistical analysis; Raman-atomic force microscope; SEM; ac breakdown strength; dielectric properties; lightning impulse breakdown strength; loss factor; permittivity; polyhedral oligomeric silsesquioxane; polymer nanocompounds; polypropylene oligomeric silsesquioxane; scanning electron microscope; statistical analysis; volume resistivity; Conducting materials; Dielectric loss measurement; Dielectric materials; Dielectric measurements; Electric breakdown; Lightning; Nanostructured materials; Permittivity measurement; Polymers; Scanning electron microscopy;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/T-DEI.2008.4446735