DocumentCode :
1059312
Title :
Molecular beam epitaxy: A technique for growth of GaAs-AlxGa1-xAs heterostructure lasers
Author :
Cho, Ara ; Casey, H.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
10
Issue :
9
fYear :
1974
fDate :
9/1/1974 12:00:00 AM
Firstpage :
791
Lastpage :
791
Keywords :
Atom optics; DH-HEMTs; Heterojunctions; Molecular beam epitaxial growth; Optical control; Optical films; Optical waveguides; Vacuum technology; Voltage control; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1974.1068447
Filename :
1068447
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1059312
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