DocumentCode :
1059334
Title :
Accurate extraction of parasitic series resistances and inductances for GaAs HFET
Author :
Wang, L. ; Xu, R.
Author_Institution :
Microwave Eng. Dept., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume :
40
Issue :
16
fYear :
2004
Firstpage :
1021
Lastpage :
1022
Abstract :
An accurate extraction method of the parasitic series resistances and inductances for a GaAs HFET is presented. The measurement of S-parameters is under the condition of cold FET (vds=0 V, vgs=0 V), the extraction procedure is not a direct extraction method, but a based-on optimisation method using a genetic algorithm. Good agreement compared with measurement is achieved.
Keywords :
III-V semiconductors; S-parameters; circuit optimisation; electric resistance measurement; field effect transistors; gallium arsenide; genetic algorithms; inductance measurement; GaAs; GaAs HFET; S-parameter measurement; genetic algorithm; optimisation method; parasitic series inductances; parasitic series resistances;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045370
Filename :
1322820
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1059334
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