AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz

Author

Dumka, D.C. ; Lee, C. ; Tserng, H.Q. ; Saunier, P. ; Kumar, M.

Author_Institution

R&D Eng., TriQuint Semicond. Texas, Richardson, TX, USA

Volume

40

Issue

16

fYear

2004

Firstpage

1023

Lastpage

1024

Abstract

The first 10 GHz power performance of AlGaN/GaN HEMTs on silicon substrate is reported. Molecular beam epitaxy grown AlGaN/GaN heterostructure and field-plate gates with 0.3 μm length are employed to fabricate the devices on 2-inch Si (111) substrates. A maximum current density of 850 mA/mm and an extrinsic transconductance of 220 mS/mm are achieved. Load pull measurements at 10 GHz demonstrate a continuous-wave output power density of 7 W/mm, which is the highest power density reported to date for an Si-based transistor. A peak power added efficiency of 52% is achieved for these devices at 10 GHz.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; microwave field effect transistors; molecular beam epitaxial growth; power HEMT; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 0.3 micron; 10 GHz; 2 inch; AlGaN-GaN; AlGaN-GaN heterostructure; HEMT; Si; Si based transistor; Si substrate; continuous wave output power density; extrinsic transconductance; field plate gates; load pull measurements; maximum current density; molecular beam epitaxy growth; peak power added efficiency; silicon substrate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20045292

Filename

1322821