• DocumentCode
    1059365
  • Title

    IMPATT oscillation in SiC p+-n--n+ diodes with a guard ring formed by vanadium ion implantation

  • Author

    Arai, M. ; Ono, S. ; Kimura, C.

  • Author_Institution
    Microwave Div., New Japan Radio Co. Ltd, Saitama, Japan
  • Volume
    40
  • Issue
    16
  • fYear
    2004
  • Firstpage
    1026
  • Lastpage
    1027
  • Abstract
    SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode´s periphery and reduced the device temperature.
  • Keywords
    IMPATT oscillators; circuit oscillations; ion implantation; microwave oscillators; silicon compounds; vanadium; wide band gap semiconductors; 1.8 W; 11.93 GHz; IMPATT diodes; IMPATT oscillation; SiC diodes; SiC:V; diode temperature reduction; guard ring; impact avalanche and transit time diodes; vanadium ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045312
  • Filename
    1322824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059365