Title :
High-Speed Time Switch Using GaAs LSI Technology
Author :
Shimazu, Yoshihiro ; Takada, Tohru
Author_Institution :
NTT, Kanagawa-ken, Japan
fDate :
1/1/1986 12:00:00 AM
Abstract :
A high-speed time switch using GaAs LSI technology is discussed. A new high-speed time switch structure consisting primarily of shift registers is proposed. This structure requires relatively minimal hardware in designing LSI. As the first stage of study, a GaAs 4-channel time switch LSI is manufactured using this structure. Switching speed of the LSI is 2 Gbits/s and the power consumption 0.64 W/chip. Largecapacity switch configurations using this time switch are proposed. This high-speed time switch makes possible the time-division switching of such services as T.V. and high-definition T.V.
Keywords :
Communication switching; High-speed integrated circuits; Large-scale integration; Switching, communication; Circuits; Communication switching; Gallium arsenide; Hardware; Large scale integration; Manufacturing; Optical switches; Random access memory; Read-write memory; Shift registers;
Journal_Title :
Selected Areas in Communications, IEEE Journal on
DOI :
10.1109/JSAC.1986.1146290