DocumentCode
1059487
Title
Modular bipolar analysis: Part I—Theory
Author
Dunkley, James L. ; Kang, S. Daniel
Author_Institution
Tektronix, Inc., Beaverton, OR
Volume
25
Issue
3
fYear
1978
fDate
3/1/1978 12:00:00 AM
Firstpage
294
Lastpage
306
Abstract
A set of general recursive equations that are used with a generalized modular model is described. The model is used to analyze realistic bipolar junction devices from their physical geometries and impurity profiles. An individual device is partitioned into simple one-dimensional modules which enables the closed recursive equations to be used in solving for each module´s electrical parameters. A companion paper describes how the individual module parameters are then superimposed upon the physical structure to obtain the intrinsic parameters that electrically represents the bipolar junction device. The device can be fully analyzed on any circuit analysis program by adding its appropriate bulk resistances and junction capacitances.
Keywords
Bibliographies; Bipolar integrated circuits; Bipolar transistor circuits; Dielectrics; Equations; Geometry; Impurities; Integrated circuit modeling; P-n junctions; Solid modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19074
Filename
1479468
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