DocumentCode :
1059487
Title :
Modular bipolar analysis: Part I—Theory
Author :
Dunkley, James L. ; Kang, S. Daniel
Author_Institution :
Tektronix, Inc., Beaverton, OR
Volume :
25
Issue :
3
fYear :
1978
fDate :
3/1/1978 12:00:00 AM
Firstpage :
294
Lastpage :
306
Abstract :
A set of general recursive equations that are used with a generalized modular model is described. The model is used to analyze realistic bipolar junction devices from their physical geometries and impurity profiles. An individual device is partitioned into simple one-dimensional modules which enables the closed recursive equations to be used in solving for each module´s electrical parameters. A companion paper describes how the individual module parameters are then superimposed upon the physical structure to obtain the intrinsic parameters that electrically represents the bipolar junction device. The device can be fully analyzed on any circuit analysis program by adding its appropriate bulk resistances and junction capacitances.
Keywords :
Bibliographies; Bipolar integrated circuits; Bipolar transistor circuits; Dielectrics; Equations; Geometry; Impurities; Integrated circuit modeling; P-n junctions; Solid modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19074
Filename :
1479468
Link To Document :
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