• DocumentCode
    1059487
  • Title

    Modular bipolar analysis: Part I—Theory

  • Author

    Dunkley, James L. ; Kang, S. Daniel

  • Author_Institution
    Tektronix, Inc., Beaverton, OR
  • Volume
    25
  • Issue
    3
  • fYear
    1978
  • fDate
    3/1/1978 12:00:00 AM
  • Firstpage
    294
  • Lastpage
    306
  • Abstract
    A set of general recursive equations that are used with a generalized modular model is described. The model is used to analyze realistic bipolar junction devices from their physical geometries and impurity profiles. An individual device is partitioned into simple one-dimensional modules which enables the closed recursive equations to be used in solving for each module´s electrical parameters. A companion paper describes how the individual module parameters are then superimposed upon the physical structure to obtain the intrinsic parameters that electrically represents the bipolar junction device. The device can be fully analyzed on any circuit analysis program by adding its appropriate bulk resistances and junction capacitances.
  • Keywords
    Bibliographies; Bipolar integrated circuits; Bipolar transistor circuits; Dielectrics; Equations; Geometry; Impurities; Integrated circuit modeling; P-n junctions; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19074
  • Filename
    1479468