• DocumentCode
    1059548
  • Title

    Integrated injection logic for a linear/digital LSI environment

  • Author

    Elmasry, Mohamed I. ; Elsaid, Mohamed H. ; Roulston, David J. ; Rofail, Samir S.

  • Author_Institution
    University of Waterloo, ON, Canada
  • Volume
    25
  • Issue
    3
  • fYear
    1978
  • fDate
    3/1/1978 12:00:00 AM
  • Firstpage
    351
  • Lastpage
    357
  • Abstract
    The dc and transient performance of Integrated Injection Logic (I2L) structures in a linear/digital LSI environment is analyzed and modeled. The analysis is based on a functional modeling approach and uses a one-dimensional regional computer device analysis program which includes heavy doping effects and doping level mobility dependence. The computed results are used to evaluate the performance of I2L structures in five bioplar technologies. Means of decreasing the effective epitaxial layer thickness and decreasing the effective epi-resistivities of the I2L part of the chip, without affecting the breakdown voltage of the linear part, are given and evaluated. The computed results are compared to experiments.
  • Keywords
    Doping; Epitaxial layers; Large scale integration; Linear circuits; Logic circuits; Logic devices; Performance analysis; Semiconductor process modeling; Space charge; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19080
  • Filename
    1479474