DocumentCode
1059548
Title
Integrated injection logic for a linear/digital LSI environment
Author
Elmasry, Mohamed I. ; Elsaid, Mohamed H. ; Roulston, David J. ; Rofail, Samir S.
Author_Institution
University of Waterloo, ON, Canada
Volume
25
Issue
3
fYear
1978
fDate
3/1/1978 12:00:00 AM
Firstpage
351
Lastpage
357
Abstract
The dc and transient performance of Integrated Injection Logic (I2L) structures in a linear/digital LSI environment is analyzed and modeled. The analysis is based on a functional modeling approach and uses a one-dimensional regional computer device analysis program which includes heavy doping effects and doping level mobility dependence. The computed results are used to evaluate the performance of I2L structures in five bioplar technologies. Means of decreasing the effective epitaxial layer thickness and decreasing the effective epi-resistivities of the I2L part of the chip, without affecting the breakdown voltage of the linear part, are given and evaluated. The computed results are compared to experiments.
Keywords
Doping; Epitaxial layers; Large scale integration; Linear circuits; Logic circuits; Logic devices; Performance analysis; Semiconductor process modeling; Space charge; Transient analysis;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19080
Filename
1479474
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