• DocumentCode
    1059555
  • Title

    Scaling is dead, long live innovation! [90 nm CMOS process technology]

  • Author

    Walko, John

  • Volume
    50
  • Issue
    6
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    23
  • Abstract
    The shift to 90 nm CMOS process technology in the semiconductor-making business has highlighted problems that need solving by going back to the drawing board. This article discusses limitations to the continuous scaling trend, such us gate oxide thickness causing an increase in leakage currents. It also outlines some innovative strategies that may help to overcome the inherent limitations.
  • Keywords
    CMOS integrated circuits; leakage currents; nanoelectronics; 90 nm; CMOS process technology; device scaling; gate oxide thickness; leakage currents;
  • fLanguage
    English
  • Journal_Title
    IEE Review
  • Publisher
    iet
  • ISSN
    0953-5683
  • Type

    jour

  • DOI
    10.1049/ir:20040601
  • Filename
    1322845