DocumentCode
1059555
Title
Scaling is dead, long live innovation! [90 nm CMOS process technology]
Author
Walko, John
Volume
50
Issue
6
fYear
2004
fDate
6/1/2004 12:00:00 AM
Firstpage
23
Abstract
The shift to 90 nm CMOS process technology in the semiconductor-making business has highlighted problems that need solving by going back to the drawing board. This article discusses limitations to the continuous scaling trend, such us gate oxide thickness causing an increase in leakage currents. It also outlines some innovative strategies that may help to overcome the inherent limitations.
Keywords
CMOS integrated circuits; leakage currents; nanoelectronics; 90 nm; CMOS process technology; device scaling; gate oxide thickness; leakage currents;
fLanguage
English
Journal_Title
IEE Review
Publisher
iet
ISSN
0953-5683
Type
jour
DOI
10.1049/ir:20040601
Filename
1322845
Link To Document