Title :
A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology
Author :
Chang, Fong-Cheng ; Wu, Pei-Si ; Lei, Ming-Fong ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A broadband singly balanced distributed mixer is developed using a 0.15-mum GaAs pHEMT foundry process. It is the first time that the charge-injection approach is applied to a distributed mixer. With the advantage of charge-injection, the mixer achieves a high conversion gain with low dc consumption. The fabricated distributed mixer with an integrated broadband transformer has a compact chip size of 2mmtimes1mm. Measurement results show that the mixer achieves a conversion gain of better than 3.5dB over a broadband frequency from 4-41GHz, with a relatively low dc power consumption of 100mW
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; charge injection; field effect MIMIC; gallium arsenide; low-power electronics; millimetre wave mixers; 0.15 micron; 1 mm; 100 mW; 2 mm; 4 to 41 GHz; GaAs; MIMIC; MMIC; active mixer; broadband mixer; charge injection; distributed mixer; integrated broadband transformer; monolithic microwave integrated circuit; pHEMT; pseudomorphic high electron mobility transistor; Energy consumption; Foundries; Frequency conversion; Frequency measurement; Gain measurement; Gallium arsenide; Mixers; PHEMTs; Power measurement; Semiconductor device measurement; Active mixer; GaAs monolithic; broadband mixer; distributed circuit; down-conversion; mixer; monolithic microwave integrated circuit (MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.890341
