DocumentCode :
1059571
Title :
A Proton Pumping Gate Field-Effect Transistor for a Hydrogen Gas Sensor
Author :
Tsukada, Keiji ; Yamaguchi, Tomiharu ; Kiwa, Toshihiko
Author_Institution :
Okayama Univ., Okayama
Volume :
7
Issue :
9
fYear :
2007
Firstpage :
1268
Lastpage :
1269
Abstract :
A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.
Keywords :
field effect transistors; gas sensors; hydrogen; AC modulation; DC modulation; FET; Pd/proton conducting polymer/Pt structure; hydrogen gas sensor; hydrogen sensitivity; modulated output; proton pumping gate field-effect transistor; self-check function; triple layer gate structure; Biomembranes; Chemical sensors; FETs; Gas detectors; Hydrogen; Polymers; Protons; Safety; Sensor systems; Voltage; Field-effect transistor (FET); hydrogen gas sensor; proton; self check function;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2007.901268
Filename :
4276699
Link To Document :
بازگشت