A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Author

Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Hong-Zhi ; Lin, Che-Hung ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her

Author_Institution

Adv. Optoelectronic Technol. Center, Nat. Cheng-Kung Univ., Tainan

Volume

17

Issue

2

fYear

2007

Firstpage

151

Lastpage

153

Abstract

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; 0.35 micron; 10 W; 2700 mA; 3 mil; 40 dB; 50 ohm; 8 V; 9.1 to 10.7 GHz; AlGaAs-InGaAs-GaAs; MMIC power amplifiers; X band; continuous-wave saturation; pHEMT; power added efficiency; pseudomorphic high electron mobility transistor; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Microwave integrated circuits; Microwave transistors; PHEMTs; Power amplifiers; Monolithic microwave integrated circuit (MMIC); X-band; power amplifier (PA); pseudomorphic high electron mobility transistors (PHEMTs);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890346

Filename

4079624