Title :
On the base region minority carrier concentration in narrow-base transistors
Author :
McCleer, P.J. ; Haddad, G.I.
Author_Institution :
The University of Michigan, Ann Arbor, MI
fDate :
3/1/1978 12:00:00 AM
Abstract :
An empirical current- and voltage-dependent boundary condition for the minority carrier concentration at the base edge of the collector-base depletion layer in a one-dimensional narrow-base transistor structure is presented. The limitations for narrow-base structures of the standard, voltage-only-dependent condition are discussed. DC and small-signal ac analyses using the new boundary condition are also presented.
Keywords :
Area measurement; Capacitance measurement; Delay effects; Electroluminescence; Electrons; Light emitting diodes; Regression analysis; Semiconductor diodes; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19087
