Dual Low-Voltage IC Design for High-Voltage Floating Gate Drives

Author

Yin, Yan ; Zane, Regan

Author_Institution

Nat. Semicond., Longmont, CO

Volume

55

Issue

6

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1751

Lastpage

1758

Abstract

An integrated circuit (IC) design for low and high side gate drive in high-voltage applications is presented based on use of two identical low-voltage ICs that provide a low cost alternative to existing high-voltage IC floating gate drivers. The approach uses a single external coupling capacitor between the two ICs with on-chip circuitry to provide charge pump power supply and on/off signaling. Design details are given for each of the core blocks of a custom IC prototype fabricated in a 20-V 0.8- mum CMOS process. Experimental results are presented demonstrating successful drive of a 200-V half-bridge with an electronic ballast and 32-W linear fluorescent lamp load.

Keywords

CMOS integrated circuits; driver circuits; integrated circuit design; CMOS process; charge pump power supply; external coupling capacitor; floating gate drivers; high-voltage IC; high-voltage floating gate drives; integrated circuit design; low-voltage IC design; on-chip circuitry; power 32 W; size 0.8 mum; voltage 20 V; voltage 200 V; Capacitive coupling; capacitive coupling; charge pump; electronic ballast; floating; gate drive; high voltage; integrated circuit; integrated circuit (IC);

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2008.917995

Filename

4446771