Title :
A proposed new high-speed optical detector
Author :
McCleer, P.J. ; Haddad, G.I.
Author_Institution :
The University of Michigan, Ann Arbor, MI
fDate :
3/1/1978 12:00:00 AM
Abstract :
The small-signal optical detection properties of the barrier injection transit-time (BARITT) diode structure are presented. At low frequencies, the device behaves as a punch-through phototransistor while at frequencies near the transit-time frequency the device is capable of additional gain due to negative-resistance reflection-type amplification.
Keywords :
Boron; Conductivity; Epitaxial layers; Impurities; Lighting; Optical detectors; Photovoltaic cells; Substrates; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19091
