DocumentCode :
1059676
Title :
Corner currents in rectangular diffused p+-n-n+diodes
Author :
Roulston, David J. ; Elsaid, Mohamed H. ; Lau, M. ; Watt, Lynn A.
Author_Institution :
University of Waterloo, Waterloo, ON, Canada
Volume :
25
Issue :
3
fYear :
1978
fDate :
3/1/1978 12:00:00 AM
Firstpage :
392
Lastpage :
393
Abstract :
The low-level injection dc characteristics of rectangular p+-n-n+diodes are discussed, and the vertical, lateral, and corner current components are analyzed and measured. It is shown that the corner current can be a significant fraction of the total current and a simple analytic expression is given.
Keywords :
Charge carrier processes; Current density; Current measurement; Diodes; Epitaxial layers; Metallization; P-n junctions; Semiconductor device measurement; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19092
Filename :
1479486
Link To Document :
بازگشت