High Aspect Ratio Vertical Cantilever RF-MEMS Variable Capacitor

Author

Klymyshyn, David M. ; Haluzan, Darcy T. ; Börner, Martin ; Achenbach, Sven ; Mohr, Jürgen ; Mappes, Timo

Author_Institution

Dept. of Electr. Eng., Saskatchewan Univ., Saskatoon, Sask.

Volume

17

Issue

2

fYear

2007

Firstpage

127

Lastpage

129

Abstract

An electrostatically actuated, microwave microelectromechanical system variable capacitor fabricated using deep X-ray lithography is presented. A single exposure has been used to produce the novel high aspect ratio microstructure, which includes a thin, vertically oriented, movable nickel cantilever beam and a 40:1 vertical aspect ratio capacitance gap. The 0.8-pF capacitor operates in the 1-5GHz region and has Q-factors of 36 at 4GHz and 133 at 2 GHz. The variable capacitance ratio is 1.24:1 over a 20-V tuning range at 4GHz

Keywords

UHF devices; cantilevers; capacitors; micromechanical devices; microwave devices; 1 to 5 GHz; RF MEMS; X-ray lithography; aspect ratio; microelectromechanical devices; micromachining; microwave devices; microwave switches; varactors; variable capacitor; vertical cantilever; Capacitance; Capacitors; Electrodes; Microelectromechanical systems; Microstructure; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Space technology; X-ray lithography; Capacitors; X-ray lithography; microelectromechanical devices; micromachining; microwave devices; microwave switches; varactors;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890338

Filename

4079634