• DocumentCode
    1059850
  • Title

    Emitter current-crowding in high-voltage transistors

  • Author

    Hower, Philip L. ; Einthoven, Willem G.

  • Author_Institution
    Westinghouse Research Laboratories, Pittsburgh, PA
  • Volume
    25
  • Issue
    4
  • fYear
    1978
  • fDate
    4/1/1978 12:00:00 AM
  • Firstpage
    465
  • Lastpage
    471
  • Abstract
    The problem of emitter current-crowding is treated for the case where the base is heavily doped with respect to the collector and the transistor is operating in the quasisaturation region. Closed-form solutions for terminal currents and current gain are derived in terms of elliptic integrals and other related functions. Good agreement with experimental data is demonstrated and various design implications of the theory are discussed.
  • Keywords
    Charge carrier density; Charge carrier processes; Closed-form solution; Current density; Doping; Electron mobility; Impurities; Laboratories; Solids; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19108
  • Filename
    1479502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059850