Title :
DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories
Author :
Yusung Kim ; Choday, Sri Harsha ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A new device structure for spin-transfer torque-based magnetic random access memory (STT-MRAM) is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. In addition, because of inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10× improvement in write energy over the standard 1T1R in-plane STT-MRAM memory cell, and 1.6× faster read operation compared with single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.
Keywords :
DRAM chips; spin Hall effect; 1T1R in-plane STT-MRAM memory cell; DSH-MRAM; bit-cell characteristics; differential device structure; differential memory cell; differential spin Hall MRAM; energy-efficient write operation; on-chip memories; on-chip memory application; read operation; spin Hall effect; spin-transfer torque-based magnetic random access memory; Hall effect; Magnetic tunneling; Reliability; Resistance; Standards; Switches; Transistors; Differential magnetic random access memory (MRAM); spin Hall effect (SHE); spin torque; spin-transfer torque MRAM (STT-MRAM); spintronics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2279153
