DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories

A new device structure for spin-transfer torque-based magnetic random access memory (STT-MRAM) is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. In addition, because of inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10× improvement in write energy over the standard 1T1R in-plane STT-MRAM memory cell, and 1.6× faster read operation compared with single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.