DocumentCode :
1059902
Title :
The effect of ionizing radiation on mobile ion current peaks in MOS capacitors
Author :
Repace, James L.
Author_Institution :
Naval Research Laboratory, Washington, DC
Volume :
25
Issue :
4
fYear :
1978
fDate :
4/1/1978 12:00:00 AM
Firstpage :
492
Lastpage :
494
Abstract :
MOS capacitors were examined for sodium ion concentrations before and after radiation using the high-temperature voltage ramp technique. The radiation caused a field-dependent lateral shift of the Na+displacement current peak along the voltage axis. An explanation is suggested based upon lateral nonuniformities and image forces.
Keywords :
Annealing; Corona; Gamma rays; Government; Ionizing radiation; MOS capacitors; Oxidation; Protection; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19113
Filename :
1479507
Link To Document :
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