Re-examination of quantum Hall plateaus

Author

Van Degrift, C.T. ; Yoshihiro, Kazuo ; Palm, E.C. ; Wakabayashi, J. ; Kawaji, S.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

Volume

42

Issue

2

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

562

Lastpage

567

Abstract

Even though the unit of electrical resistance was based on the quantum Hall effect starting January 1, 1990, the understanding of the fundamental physics of current flow, contacting, and impurity effects in quantum Hall systems remains incomplete. Some effects which may affect quantum Hall resistance determinations are examined. Improvements to the NIST potentiometric measurement system are described, and new data comparing the i=4 plateaus of a Si-MOSFET and a GaAs heterostructure with a room temperature reference resistance are presented

Keywords

III-V semiconductors; electric resistance measurement; elemental semiconductors; gallium arsenide; insulated gate field effect transistors; measurement standards; p-n heterojunctions; potentiometers; quantum Hall effect; silicon; units (measurement); GaAs; MOSFET; NIST potentiometric measurement system; Si; current flow; heterostructure; impurity effects; quantum Hall plateaus; room temperature reference resistance; Electric resistance; Electrical resistance measurement; Gallium arsenide; Hall effect; Impurities; Laboratories; NIST; Physics; Temperature; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.278626

Filename

278626