Title :
Re-examination of quantum Hall plateaus
Author :
Van Degrift, C.T. ; Yoshihiro, Kazuo ; Palm, E.C. ; Wakabayashi, J. ; Kawaji, S.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Even though the unit of electrical resistance was based on the quantum Hall effect starting January 1, 1990, the understanding of the fundamental physics of current flow, contacting, and impurity effects in quantum Hall systems remains incomplete. Some effects which may affect quantum Hall resistance determinations are examined. Improvements to the NIST potentiometric measurement system are described, and new data comparing the i=4 plateaus of a Si-MOSFET and a GaAs heterostructure with a room temperature reference resistance are presented
Keywords :
III-V semiconductors; electric resistance measurement; elemental semiconductors; gallium arsenide; insulated gate field effect transistors; measurement standards; p-n heterojunctions; potentiometers; quantum Hall effect; silicon; units (measurement); GaAs; MOSFET; NIST potentiometric measurement system; Si; current flow; heterostructure; impurity effects; quantum Hall plateaus; room temperature reference resistance; Electric resistance; Electrical resistance measurement; Gallium arsenide; Hall effect; Impurities; Laboratories; NIST; Physics; Temperature; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
