Title :
High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics
Author :
Lin, Jie ; Leven, Andreas ; Weimann, N.G. ; Yang, Y. ; Kopf, R.F. ; Reyes, R. ; Chen, Y.K.
Author_Institution :
Electr. Eng. Dept., Bucknell Univ., Lewisburg, PA
fDate :
3/1/2007 12:00:00 AM
Abstract :
An InP-based high-speed optical modulator is presented. The Schottky-i-n waveguide structure on InP-based material was used to reduce the switching voltage Vpi and the excess loss, while maintaining high-modulation efficiencies. To minimize residual amplitude modulation and to improve power handling capability, the bulk electrooptic effect in InGaAlAs was utilized for phase shifting. As a result, a simple structure InAlAs-InGaAlAs Mach-Zehnder optical modulator with traveling-wave electrodes was fabricated and characterized. This device achieved a switching voltage Vpi of 3.6 V, extinction ratio (>23 dB) and high-speed operation at 1.55-mum wavelength
Keywords :
III-V semiconductors; Schottky effect; amplitude modulation; electro-optical effects; electro-optical switches; electrodes; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; microwave photonics; optical modulation; optical waveguides; 1.55 mum; 3.6 V; InAlAs-InGaAlAs; InAlAs-InGaAlAs modulator; InP-based material; InP-based optical modulator; Mach-Zehnder optical modulator; Schottky-i-n optical modulator; Schottky-i-n waveguide; bulk electrooptic effect; extinction ratio; high-modulation efficiency; high-speed optical modulator; low-loss optical modulator; phase shifting; power handling capability; radiofrequency photonics; residual amplitude modulation; traveling-wave electrodes; Amplitude modulation; Electrooptic effects; High speed optical techniques; Optical losses; Optical materials; Optical modulation; Optical waveguides; Photonics; Radio frequency; Voltage; Electrooptic effect; electrooptic modulation; optical fiber communication; semiconductor devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.891214
