DocumentCode
1060070
Title
On the compatibility of X-ray lithography and SOS device fabrication
Author
Galloway, K.F. ; Mayo, S.
Author_Institution
National Bureau of Standards,Washington, DC
Volume
25
Issue
5
fYear
1978
fDate
5/1/1978 12:00:00 AM
Firstpage
549
Lastpage
550
Abstract
If X-ray lithography is applied to the fabrication of silicon-on-sapphire devices (SOS), the average radiation absorbed dose in the sapphire at the silicon-sapphire interface is in excess of ten Mrad. Recent experiments indicate that the resulting radiation damage may not be easily annealed. These results suggest that X-ray lithography and SOS may not be compatible technologies.
Keywords
Aluminum; Annealing; Electromagnetic wave absorption; Fabrication; Leakage current; Metallization; Radiation dosage; Resists; Silicon; X-ray lithography;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19129
Filename
1479523
Link To Document