• DocumentCode
    1060088
  • Title

    Thermal-oxide gate GaAs MOSFET´s

  • Author

    Takagi, H. ; Kano, G. ; Teramoto, I.

  • Author_Institution
    Matsushita Electronics Corporation Research Laboratory, Takatsuki, Osaka, Japan
  • Volume
    25
  • Issue
    5
  • fYear
    1978
  • fDate
    5/1/1978 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    552
  • Abstract
    The first thermal-oxide gate GaAs MOSFET of the deep-depletion mode is reported. The gate oxide, which has been grown by the new GaAs oxidation technique in the As2O3vapor, is so chemically stable that it can be subjected to the fabrication process. Measurement of some dc characteristics of the device fabricated has shown a strikingly suppressed hysteresis.
  • Keywords
    DH-HEMTs; Distortion measurement; Equivalent circuits; Frequency modulation; Gallium arsenide; Harmonic analysis; Harmonic distortion; Light emitting diodes; Optical distortion; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19131
  • Filename
    1479525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1060088