DocumentCode
1060105
Title
Development of Nb/Al-oxide/Nb Josephson junction array at KRISS [voltage standard]
Author
Park, Se, II ; Kim, Kyu-Tae ; Lee, Yong Ho ; Lee, Rae Duk
Author_Institution
Korea Res. Inst. of Stand. & Sci., Taejon, South Korea
Volume
42
Issue
2
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
588
Lastpage
592
Abstract
By using the selective niobium anodization process (SNAP) an all refractory 210-junction array was fabricated at KRISS. The array consists of Nb/Al-oxide/Nb junctions that have A =20 μm×40 μm. V g=2.8 mV, an average critical current ≈650 μA, and the spread of critical currents ≈±5%. When operated at 94 GHz, the array generated zero-crossing steps up to 240 mV with stability times of more than 1 h
Keywords
Josephson effect; anodisation; integrated circuit technology; measurement standards; niobium; superconducting integrated circuits; superconducting junction devices; type II superconductors; voltage measurement; 1 hour; 240 mV; 650 muA; 94 GHz; Josephson junction array; Nb-Al2O3-Nb; anodization; critical current; stability times; voltage standard; zero-crossing steps; Dielectrics; Equations; Frequency; Josephson junctions; Niobium; Stability; Standards development; Stripline; Temperature; Voltage;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.278632
Filename
278632
Link To Document