DocumentCode :
1060150
Title :
4-GHz 15-W power GaAs MESFET
Author :
Fukuta, Masumi ; Mimura, Takashi ; Suzuki, Hidetake ; Suyama, Katsuhiko
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
Volume :
25
Issue :
6
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
559
Lastpage :
563
Abstract :
High-field behavior of GaAs MESFET´s such as drain-source breakdown characteristics and visible light emission and a model explaining these phenomena are described. An FET structure with a high drain-source breakdown voltage in excess of 26 V has been developed following an analysis of the high-field behavior of the device. Typical characteristics of the fabricated devices at 4 GHz are as follows: Pout= 9.6 W Ga= 5 dB ηadd= 33.6 percent at 18 V from single chip (WG= 13 mm) Pout= 15 W Ga= 5 dB ηadd= 28.3 percent at 22 V from two chip (WG= 26 mm) where Pout, Ga, ηadd, and WGindicate the output power, associated power gain, power added efficiency, and total gate width of the FET´s, respectively.
Keywords :
Avalanche photodiodes; Breakdown voltage; Current measurement; Electric breakdown; FETs; Gallium arsenide; Length measurement; MESFETs; Microscopy; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19136
Filename :
1479530
Link To Document :
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