• DocumentCode
    1060210
  • Title

    Noise temperature in GaAs epi-layer for FET´s

  • Author

    Graffeuil, Jacques ; Sautereau, Jean-francois ; Blasquez, Gabriel ; Rossel, Pierre

  • Author_Institution
    Universite Paul Sabatier, Toulouse, France
  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • fDate
    6/1/1978 12:00:00 AM
  • Firstpage
    596
  • Lastpage
    599
  • Abstract
    The noise temperature field-dependent relationship was experimentally investigated in thin GaAs epi-layer. It was found that the commonly used relationship is inaccurate for most of the devices. A new relationship of extended, validity was derived in the lattice temperature 90-370 K.
  • Keywords
    Electrical resistance measurement; FETs; Frequency; Gallium arsenide; Hot carriers; Lattices; MESFETs; Noise measurement; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19142
  • Filename
    1479536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1060210