Title :
Noise temperature in GaAs epi-layer for FET´s
Author :
Graffeuil, Jacques ; Sautereau, Jean-francois ; Blasquez, Gabriel ; Rossel, Pierre
Author_Institution :
Universite Paul Sabatier, Toulouse, France
fDate :
6/1/1978 12:00:00 AM
Abstract :
The noise temperature field-dependent relationship was experimentally investigated in thin GaAs epi-layer. It was found that the commonly used relationship is inaccurate for most of the devices. A new relationship of extended, validity was derived in the lattice temperature 90-370 K.
Keywords :
Electrical resistance measurement; FETs; Frequency; Gallium arsenide; Hot carriers; Lattices; MESFETs; Noise measurement; Temperature dependence; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19142
