• DocumentCode
    1060293
  • Title

    Voltage distribution in n+-n-n+and metal-cathode n-n+GaAs X-band oscillators using a SEM

  • Author

    Tee, W. John ; Farquhar, Stuart G. ; Gopinath, A.

  • Author_Institution
    Standard Telecommunication Laboratories, Harlow, England
  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • fDate
    6/1/1978 12:00:00 AM
  • Firstpage
    655
  • Lastpage
    659
  • Abstract
    Time-averaged and dynamic results have been obtained in n+-n-n+and metal cathode n-n+GaAs X -band devices, using a new voltage measurement scheme in the SEM. The n+-n-n+devices show accumulation layer propagation, and the metal-cathode devices show a trapped dipole domain behavior.
  • Keywords
    Cathodes; Electron beams; Electron emission; Gallium arsenide; Gunn devices; Oscillators; Probes; Scanning electron microscopy; Semiconductor devices; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19150
  • Filename
    1479544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1060293