DocumentCode :
1060387
Title :
Low-noise microwave bipolar transistor with sub-half-micrometer emitter width
Author :
Hwa Hsu, Tzu ; Snapp, Craig P.
Author_Institution :
Hewlett-Packard Company, Palo Alto, CA
Volume :
25
Issue :
6
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
723
Lastpage :
730
Abstract :
This paper presents details of the fabrication process and performance of an n-p-n silicon microwave bipolar transistor with emitter opening widths as small as 0.3 µm. The fabrication process involves local oxidation, ion implantation, and lateral etching techniques for emitter definition. Noise figure as low as 1.0 dB at 1.5 GHz, 2.0 dB at 4 GHz, and 3.3 d B at 6 GHz were achieved. Measured noise figures and S -parameters are shown to be in approximate agreement with modeled performance based on device structure and process parameters. Prospects for further reductions in bipolar transistor noise figures are discussed.
Keywords :
Bipolar transistors; Fabrication; Lithography; Microwave devices; Microwave transistors; Noise figure; Noise measurement; Oxidation; Parasitic capacitance; Scattering parameters;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19160
Filename :
1479554
Link To Document :
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