Current-Voltage Characteristics of Superconductive Heterostructure Arrays

Author

Ghamsari, Behnood G. ; Majedi, A.Hamed

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada

Volume

19

Issue

3

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

737

Lastpage

740

Abstract

A systematic approach is presented to calculate the I-V characteristic of a general superconductive multilayer heterostructure, consisting of superconductors(S), normal metals(N), semiconductors(Sm) and insulators(I), with finite transparency and effective mass mismatch at the junctions. The transfer matrix method is used to obtain the scattering probability amplitudes of quasiparticles for the Andreev and ordinary reflection as well as the transmission with and without branch-crossing based on the solutions of the Bogoliubov-de Gennes equation. The method is then applied to study a niobium NSNSN structure with variable thickness of layers.

Keywords

characteristics measurement; superconducting arrays; superconducting junction devices; transfer function matrices; Andreev reflection; Bogoliubov-de Gennes equation; I-V characteristic calculation; current-voltage characteristics; niobium NSNSN structure; scattering probability amplitude; superconductive heterostructure array; superconductive multilayer heterostructure; transfer matrix method; Andreev reflection; Bogoliubov-de Gennes equation; superconductive heterostructures; superconductive super lattices;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2009.2018540

Filename

5067166