Title :
Metal-oxide-semiconductor instability produced by electron-beam evaporation of Aluminum gates
Author :
Han-Sheng Lee ; Sheng Lee, Han
Author_Institution :
General Motors Research Laboratories, Warren, MI
fDate :
7/1/1978 12:00:00 AM
Abstract :
The production of defect states in the oxide of MOS capacitors during the electron-beam metallization process was identified as the cause of the threshold voltage instability experienced at elevated temperatures with negative bias on the gate. Both n- and p-type silicon substrates,
Keywords :
Aluminum; Capacitance-voltage characteristics; Conductivity; Electrodes; MOS capacitors; MOS devices; Metallization; Silicon; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19172
