Title :
Development of Three-Dimensional Microstages Using Inclined Deep-Reactive Ion Etching
Author :
Ando, Yasuhisa ; Ikehara, Tsuyoshi ; Matsumoto, Sohei
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
fDate :
6/1/2007 12:00:00 AM
Abstract :
Three-dimensional (3-D) microstages driven by electrostatic comb actuators that provide continuous motion along three axes (x,y , and z ) were designed and fabricated. Each 3-D microstage consisted of sets of traveling tables, suspension systems, and comb actuators. To convert lateral displacement of the comb actuators to vertical motion, one suspension system incorporated leaf springs inclined to a substrate. To efficiently construct the inclined leaf springs, we devised a fabrication technique that uses deep reactive ion etching. Three-dimensional microstages were then fabricated in a 20-mum-thick device layer on a silicon-on-insulator wafer. The maximum vertical (z) displacement of this 3-D microstage was 2.6 mum, and the maximum lateral displacement (x and y) was more than 6 mum in each direction, achieved by using support suspensions to suppress the interference between the comb actuators. A 3-D microstage was then installed in a commercial atomic force microscope, and a 3-D image of a grating was successfully measured without hysteresis using this 3-D microstage as the scanning device.
Keywords :
atomic force microscopy; electrostatic actuators; silicon-on-insulator; springs (mechanical); sputter etching; 3D microstages; DRIE; atomic force microscope; electrostatic comb actuators; inclined deep-reactive ion etching; inclined leaf springs; maximum lateral displacement; maximum vertical displacement; silicon-on-insulator wafer; size 2.6 mum; size 20 mum; suspension systems; traveling tables; Atomic force microscopy; Atomic measurements; Electrostatic actuators; Etching; Fabrication; Force measurement; Gratings; Interference suppression; Silicon on insulator technology; Springs;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2006.885848