DocumentCode
106054
Title
Fe-Doped Armchair Graphene Nanoribbons for Spintronic/Interconnect Applications
Author
Jaiswal, Nitesh Kumar ; Srivastava, Prashant
Author_Institution
Dept. of Appl. Sci., ABV-Indian Inst. of Inf. Technol. & Manage. (ABV-IIITM), Gwalior, India
Volume
12
Issue
5
fYear
2013
fDate
Sept. 2013
Firstpage
685
Lastpage
691
Abstract
In this study, we investigate structural stability, and electronic and transport properties of Fe terminated/doped armchair graphene nanoribbons (AGNR) through first-principles calculations based on density functional theory. Results show that substitutional Fe impurities have a stable bonding with AGNR and center of the ribbon is regarded as the most preferred doping site. The observed magnetic moment of an Fe atom varies from 1.95 μB to 2.93 μB depending upon the doping site. The electronic structure calculations reveal breaking of degeneracy for the opposite spin states which is further supported by the density of states and the projected density of state analysis. Spin polarization of 60% was obtained which can be tuned by varying the position of Fe atoms. Moreover, there exist a number of conduction channels crossing the Fermi level and thereby causing high metallicity for all the ribbons irrespective of ribbon widths or the position of Fe impurity. The observed high metallic behavior is further confirmed by the transmission spectrum and current versus voltage ( I-V) calculations. The present results show the potential of considered nanoribbons for the spintronic/interconnect applications.
Keywords
Fermi level; ab initio calculations; bonds (chemical); conduction bands; density functional theory; doping; electronic density of states; graphene; iron; magnetic impurities; magnetic moments; nanomagnetics; nanoribbons; spin polarised transport; AGNR; C:Fe; Fe terminated arm-chair graphene nanoribbons; Fe-doped armchair graphene nanoribbons; Fermi level; I-V calculations; conduction channels; current versus voltage calculations; density functional theory; density of states; doping; electronic properties; electronic structure; first-principles calculations; impurities; interconnect application; magnetic moment; metallic behavior; metallicity; ribbon widths; spin polarization; spin states; spintronic application; stable bonding; structural stability; transmission spectrum; transport properties; I–V characteristics; magnetic moment; nanoribbon; spintronic;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2268899
Filename
6532348
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