DocumentCode :
1060544
Title :
A tunable laser diode with a photothermally driven integrated cantilever and related properties
Author :
Ukita, Hiroo
Author_Institution :
Fac. of Sci. & Eng., Ritsumeikan Univ., Shiga, Japan
Volume :
10
Issue :
3
fYear :
2004
Firstpage :
622
Lastpage :
628
Abstract :
This paper proposes a photothermally driven tunable laser diode (LD). We demonstrate a micromechanically tunable structure using an edge-emitting LD, a trial fabrication for a monolithic integration with a cantilever and LDs, an enhanced design for widening the wavelength tuning range, and wavelength variation experiments. We describe the design of an antireflection layer and a bimorph layer structure cantilever and expect the deflection to exceed half a wavelength by the temperature increase of 100°C. We also confirm a 23-nm wavelength variation by changing the external-cavity length of the LD, which features an antireflection coating on the LD facet facing the external mirror.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; integrated optoelectronics; laser cavity resonators; laser tuning; micromechanical devices; monolithic integrated circuits; optical deflectors; optical design techniques; optical fabrication; photothermal effects; semiconductor lasers; antireflection coating design; bimorph layer structure; deflection; edge-emitting LD; external-cavity length; integrated cantilever; micromechanical structure; monolithic integration; photothermal effect; tunable laser diode; wavelength tuning range widening; wavelength variation; Diode lasers; Gallium arsenide; Integrated optics; Laser tuning; Micromechanical devices; Mirrors; Optical sensors; Reflectivity; Tunable circuits and devices; Vertical cavity surface emitting lasers; GaAs; III-V compounds; InP; LD; MEMS; antireflection coating; bimorph structure; external-cavity length; gallium arsenide; indium phosphide; integrated systems; monolithic integration; optical microelectromechanical systems; photothermal effect; thermal strain; tunable laser diode; wavelength tuning;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2004.828474
Filename :
1323069
Link To Document :
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