DocumentCode
1060566
Title
Determination of nonuniform diffusion length and electric field in semiconductors
Author
Hu, Chenming
Author_Institution
University of California, Berkeley, CA
Volume
25
Issue
7
fYear
1978
fDate
7/1/1978 12:00:00 AM
Firstpage
822
Lastpage
825
Abstract
A method is proposed that purports to measure the non-uniform diffusion length 
in the presence of an arbitrary electric field 
. A point source of carrier generation (as a model for an electron beam) scans across the sample in the thickness direction x while the induced currents are measured at two reverse-biased junctions sandwiching the sample. and 
can be deduced from the currents. If only one collecting junction is present, one of the two functions may be deduced provided that the other is known; in addition, the surface recombination velocity at the other boundary may be determined in the presence of arbitrary and . With additional scanning in the 
and 
directions, quasi three-dimensional mapping is possible.
in the presence of an arbitrary electric field . A point source of carrier generation (as a model for an electron beam) scans across the sample in the thickness direction x while the induced currents are measured at two reverse-biased junctions sandwiching the sample. and can be deduced from the currents. If only one collecting junction is present, one of the two functions may be deduced provided that the other is known; in addition, the surface recombination velocity at the other boundary may be determined in the presence of arbitrary and . With additional scanning in the and directions, quasi three-dimensional mapping is possible.Keywords
Charge carrier lifetime; Current measurement; Electron beams; Length measurement; Nonuniform electric fields; P-n junctions; Radiative recombination; Semiconductor materials; Silicon; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19178
Filename
1479572
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