A numerical model of avalanche breakdown in MOSFET´s

An accurate numerical model of avalanche breakdown in MOSFET´s is presented. Features of this model are a) use of an accurate electric-field distribution calculated by a two-dimensional numerical analysis, b) introduction of multiplication factors for a high-field path and the channel current path, and c) incorporation of the feedback effect of the excess substrate current induced by impact ionization into the two-dimensional calculation. This model is applied to normal breakdown observed in p-MOSFET´s and to negative-resistance breakdown (snap-back or switchback breakdown) observed in short-channel n-MOSFET´s. Excess substrate current generated from channel current by impact ionization causes a significant voltage drop across the substrate resistance in short-channel n-MOSFET´s. This voltage forward-biases the source-substrate junction and increases channel current causing a positive feedback effect. This results in a decrease of the breakdown voltage and leads to negative-resistance characteristics. Current-voltage characteristics calculated by the present model agree very well with experimental results. Another model, highly simplified and convenient for device design, is also presented. It predicts some advantages of p-MOSFET´s over n-MOSFET´s from the standpoint of avalanche breakdown voltage, particularly in the submicrometer channel-length range.