Title :
Calculation of potential profiles in the junction charge-coupled device
Author :
Herman, Gérard C. ; Hartgring, Cornelis D. ; Kleefstra, Marcus
Author_Institution :
Delft University of Technology, Delft, The Netherlands
fDate :
7/1/1978 12:00:00 AM
Abstract :
A method is presented for calculating the potential in a junction charge-coupled device (JCCD) by solving the two-dimensional Poisson equation numerically. This method is used to analyze the possibility of obtaining a smooth potential profile in the transfer channel by a phosphorus ion implantation under the gates.
Keywords :
Boundary conditions; Charge coupled devices; Diodes; Electrons; Epitaxial layers; Ion implantation; Lead compounds; Poisson equations; Potential well; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19183
