Experimental MOS C-V data in strong inversion

Experimental capacitance-voltage ( ) data are presented to verify recent theories of surface minority carrier redistribution in MOS capacitors biased near strong inversion. The surface layer of minority carriers shunts a portion of the surface space-charge layer resulting in a small capacitance minimum and a slightly larger asymptotic capacitance in strong inversion than predicted by older theory. The agreement between the experiment and the recent theory is very good. The experimental asymptotic capacitance in strong inversion is slightly larger than predicted. This discrepancy is attributable to the surface quantization effect not contained in the recent theory.