Title :
A complementary DMOS-VMOS IC structure
Author :
Jhabvala, M. ; Lin, H.C.
Author_Institution :
NASA, GSFC, Greenbelt, MD
fDate :
7/1/1978 12:00:00 AM
Abstract :
A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical gm. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.
Keywords :
Cyclic redundancy check; Electron devices; Etching; Inverters; MOSFETs; Oxidation; Silicon; Solid state circuits; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19185
