Title :
Duak-Gate MOSFETS in TV if Amplifiers
Author_Institution :
Texas Instruments Incorporated
fDate :
5/1/1970 12:00:00 AM
Abstract :
The design of a dual gate MOSFET amplifier is, in theory, simpler than that of a bipolar amplifier because of the very low feedback associated with the dual gate device. When feedback is low enough to be neglected, the input impedance Zi= 1/Y11; the output impedance Zo = 1/Y22; and the voltage gain Vo/Vi = Y21RL, where RL is the total parallel resistance across the output tuned circuit, and includes ReY22.
Keywords :
Bandwidth; Capacitance; Electrical resistance measurement; Feedback; Frequency response; Impedance; MOSFETs; RLC circuits; TV; Voltage;
Journal_Title :
Broadcast and Television Receivers, IEEE Transactions on
DOI :
10.1109/TBTR1.1970.299479
