Title :
An improved input protection circuit for C-MOS/SOS arrays
Author :
Cohen, Seymour H. ; Caswell, Gregory K.
Author_Institution :
RCA Corporation, Somerville, NJ
fDate :
8/1/1978 12:00:00 AM
Abstract :
A protective network for silicon-gate C-MOS/SOS arrays has been designed that is capable of protecting input circuits from static discharges in excess of 2200 V. This paper describes the results of a program undertaken at RCA to develop a protection network for C-MOS arrays on sapphire substrates capable of withstanding 1500-v static discharges. A test chip with eight input protection configurations was designed, processed, and tested. The results were incorporated into a network design that exceeds the requirements without degrading circuit speed.
Keywords :
Atherosclerosis; Circuit testing; Diodes; Geometry; Inverters; Protection; Pulse measurements; Solid state circuits; Teeth; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19203
