Title :
Short-channel C-MOS/SOS technology
Author :
Yuan, Jack H. ; Harari, Eli
Author_Institution :
Hughes Aircraft Company, Newport Beach, CA
fDate :
8/1/1978 12:00:00 AM
Abstract :
Design, fabrication, and characterization of Si-gate short-channel C-MOS/SOS devices with channel length ranging from 1 to 3 µm are presented. Basic device parameters and their interrelations are discussed and illustrated in detail. Extremely-high-speed and low-power capability has been demonstrated for short-channel devices operating from a 5-V supply voltage. The process reproducibility and circuit performance point to the suitability of short-channel C-MOS/SOS technology for VLSI applications.
Keywords :
Breakdown voltage; Circuits; Doping; Fabrication; Power dissipation; Reproducibility of results; Testing; Threshold voltage; Transconductance; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19212
